Series9100 PRO
Form FactorM.2 (2280)
Capacity4TB
N A N D Flash TypeSamsung V-NAND TLC
InterfacePCIe 5.0 x4, NVMe™ 2.0
Max Sequential ReadUp to 14,800 MB/s
Max Sequential WriteUp to 13,400 MB/s
D R A M4GB Low Power DDR4X SDRAM
Endurance ( T B W)2400 TBW
Impact Resistance1,500 G & 0.5 ms (Half sine)
Cache4GB Low Power DDR4X SDRAM
UsageClient PCs, PlayStation®5
capacity