Form FactorM.2 (2280)
Capacity1TB
N A N D Flash TypeSamsung V-NAND TLC
Max Sequential ReadUp to 14,700 MB/s
InterfacePCIe® 5.0 x4, NVMe™ 2.0
Max Sequential WriteUp to 13,300 MB/s
D R A MSamsung 1GB Low Power DDR4X SDRAM
Endurance ( T B W)600 TBW
Impact Resistance1,500 G / 0.5 ms (Half sine)
Cache1GB DDR4X DRAM
UsageClient PCs, Game Consoles
capacity1TB
interface